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R6006JNJGTL

Part No R6006JNJGTL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 6A LPTS  /  N-Channel 600 V 6A (Tc) 86W (Tc) Surface Mount LPTS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 936mOhm @ 3A, 15V
Vgs(th) (Max) @ Id 7V @ 800µA
Gate Charge (Qg) (Max) @ Vgs 15.5 nC @ 15 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 100 V
Power Dissipation (Max) 86W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package LPTS
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number R6006
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Names R6006JNJGTLTR,R6006JNJGTLCT,R6006JNJGTLDKR
Standard Package 1,000
Win Source Part Number 1201365-R6006JNJGTL
Ultra Librarian 3D Model Ultra Librarian R6006JNJGTL CAD Model

Description

The ON Semiconductor R6006JNJGTL is an N-channel MOSFET transistor that can handle a drain-source voltage of 600V and a continuous drain current of 6A at 25°C.

  • Channel Type: N-channel
  • Drain-Source Voltage: 600V
  • Continuous Drain Current: 6A @ 25°C
  • Supply and Demand Status: limited
  • Power Dissipation: 86W @ Tc
  • Input Capacitance: 410pF @ 100Vds
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Mounting Style: SMD
  • Gate Charge: 15.5nC @ 15Vgs
  • Manufacturer: ON Semiconductor

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