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Same model may have multiple batches, images only for reference.
R6009JND3TL1 Real Image
Same model may have multiple batches, images only for reference.

R6009JND3TL1

Part No R6009JND3TL1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 9A TO252  /  N-Channel 600 V 9A (Tc) 125W (Tc) Surface Mount TO-252
Datasheet
R6009JND3TL1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 585mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id 7V @ 1.38mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 15 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 645 pF @ 100 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-252
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number R6009
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names R6009JND3TL1TR,R6009JND3TL1DKR,R6009JND3TL1CT
Standard Package 2,500
Win Source Part Number 1014244-R6009JND3TL1
Ultra Librarian 3D Model Ultra Librarian R6009JND3TL1 CAD Model

Description

The R6009JND3TL1 is an N-Channel MOSFET transistor designed for use in discrete semiconductor products from Rohm Semiconductor.

  • Drain to Source Voltage: 600 V
  • Continuous Drain Current: 9A (Tc)
  • Maximum Rds On: 585mOhm @ 4.5A, 15V
  • Gate Charge: 22 nC @ 15 V
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63 case
  • Temperature Range: -55°C to 150°C (TJ)
  • MSL Level: 1 (Unlimited)
  • HTSUS: 8541.29.0095

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