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Same model may have multiple batches, images only for reference.
R6012ANJTL Real Image
Same model may have multiple batches, images only for reference.

R6012ANJTL

Part No R6012ANJTL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 12A LPTS  /  N-Channel 600 V 12A (Ta) 100W (Tc) Surface Mount LPTS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 420mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
Power Dissipation (Max) 100W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package LPTS
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number R6012
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
Win Source Part Number 1217056-R6012ANJTL
Ultra Librarian 3D Model Ultra Librarian R6012ANJTL CAD Model

Description

The 1217056-R6012ANJTL is a discrete semiconductor product of the Transistors - FETs, MOSFETs - Single category.

  • Category: Transistors - FETs, MOSFETs - Single
  • Technology: MOSFET (Metal Oxide)
  • FET Type: N-Channel
  • Vdss: 600 V
  • Id @ 25°C: 12A (Ta)
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Power Dissipation (Max): 100W (Tc)
  • Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Qg (Max) @ Vgs: 35 nC @ 10 V
  • Ciss (Max) @ Vds: 1300 pF @ 25 V
  • Vgs (Max): ±30V
  • Temperature Range: 150°C (TJ)

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