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Same model may have multiple batches, images only for reference.
SIHB120N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHB120N60E-GE3

Part No SIHB120N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SIHB120N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1562 pF @ 100 V
Power Dissipation (Max) 179W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number SIHB120
Standard Package 1,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277743-SIHB120N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHB120N60E-GE3 CAD Model

Description

The 1277743-SIHB120N60E-GE3 is a transistor that is widely used in various applications.

  • Type: N-Channel MOSFET
  • Drain to Source Voltage: 600 V
  • Continuous Drain Current: 25 A
  • Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
  • Temperature Range: -55°C to 150°C (TJ)

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Quantity Unit Price Ext. Price
14+ $4.3224 $60.5136
33+ $3.5467 $117.0411
51+ $3.4358 $175.2258
70+ $3.3249 $232.7430
90+ $3.2141 $289.2690
121+ $2.8816 $348.6736
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