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SISA96DN-T1-GE3

Part No SISA96DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A PPAK1212-8  /  N-Channel 30 V 16A (Tc) 26.5W (Tc) Surface Mount PowerPAK® 1212-8
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 1385 pF @ 15 V
Power Dissipation (Max) 26.5W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Base Product Number SISA96
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names SISA96DN-T1-GE3TR,SISA96DN-T1-GE3DKR,SISA96DN-T1-GE3CT
Standard Package 3,000
Win Source Part Number 1210851-SISA96DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISA96DN-T1-GE3 CAD Model

Description

This MOSFET transistor is manufactured by Vishay Siliconix and is part of the TrenchFET Gen IV series.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 16A @ 25°C
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
  • Package: PowerPAK 1212-8
  • Gate Charge: 15 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.2188 $57.9820
645+ $0.1796 $115.8420
1,000+ $0.1739 $173.9000
1,375+ $0.1683 $231.4125
1,775+ $0.1628 $288.9700
2,380+ $0.1459 $347.2420
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,640 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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