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R6020ANZ

Part No R6020ANZ
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 20A TO3PF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.15V @ 1mA
Max Gate Charge 65nC @ 10V
Max Input Capacitance 2040pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 120W (Tc)
Maximum Rds On at Id,Vgs 220 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3PF
Dimension TO-3P-3 Full Pack
Win Source Part Number 042289-R6020ANZ
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian R6020ANZ CAD Model

Description

The Rohm Semiconductor R6020ANZ is a medium-popularity electronic component that is available in the market in limited supply and demand status. This PNP transistor polarity-based component has a maximum current collector of 2A and a VCEO Maximum Collector-Emitter Breakdown Voltage of 32V.

  • Manufacturer: Rohm Semiconductor
  • Component type: PNP transistor
  • Maximum current collector: 2A
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 32V
  • Maximum Vce (sat): 800mV @ 200mA, 2A
  • Collector Cut-off Current (Max): 100nA (ICBO)
  • Typical gain (hFE) (Min): 180 @ 500mA, 3V
  • Maximum power dissipation: 10W
  • Temperature range: 150°C (TJ)
  • Case or package: CPT3
  • Packaging: Reel - TR packaging
  • Frequency-transition: 100MHz

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1721 $60.2699
45+ $2.6028 $117.1260
69+ $2.5215 $173.9835
95+ $2.4402 $231.8190
123+ $2.3587 $290.1201
164+ $2.1148 $346.8272
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,299 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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