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R6020ENXC7G

Part No R6020ENXC7G
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 600V 20A TO-220FM, LOW-NOISE POW / N-Channel 600 V 20A (Ta) 68W (Tc) Through Hole TO-220FM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 196mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V
Power Dissipation (Max) 68W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220FM
Package / Case TO-220-3 Full Pack
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 846-R6020ENXC7G
Standard Package 50
Win Source Part Number 964096-R6020ENXC7G
Ultra Librarian 3D Model Ultra Librarian R6020ENXC7G CAD Model

Description

The R6020ENXC7G is an N-Channel MOSFET transistor manufactured by TA-I.

  • Channel Type: N-Channel
  • Drain to Source Voltage: 600V
  • Continuous Drain Current: 20A (Ta)
  • Rds On (Max): 196mOhm @ 9.5A, 10V
  • Vgs(th) (Max): 4V @ 1mA
  • Power Dissipation: 68W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
  • Maximum Vgs: ±20V
  • Package/Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FM
  • ECCN: EAR99
  • MSL Level: 1 (Unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7977 $51.8505
155+ $0.6545 $101.4475
240+ $0.6341 $152.1840
330+ $0.6136 $202.4880
425+ $0.5932 $252.1100
565+ $0.5318 $300.4670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,940 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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