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Same model may have multiple batches, images only for reference.
RCD080N25TL Real Image
Same model may have multiple batches, images only for reference.

RCD080N25TL

Part No RCD080N25TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 8A SOT-428
Datasheet
RCD080N25TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1440pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 850mW (Ta), 20W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CPT3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 046138-RCD080N25TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RCD080N25TL CAD Model

Description

The Rohm Semiconductor RCD080N25TL is an N-channel MOSFET that is designed to provide reliable performance in a variety of applications. With a maximum power dissipation of 850mW and a drain-source breakdown voltage of 250V, this MOSFET is suitable for use in a wide range of electronic devices.

  • However: the supply and demand status is balanced, making it readily available for purchase.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.2463 $56.0835
100+ $1.0227 $102.2700
155+ $0.9907 $153.5585
210+ $0.9587 $201.3270
270+ $0.9268 $250.2360
365+ $0.8309 $303.2785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,440 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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