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RDN050N20

Part No RDN050N20
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 5A TO-220FN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 18.6nC @ 10V
Max Input Capacitance 292pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 30W (Tc)
Maximum Rds On at Id,Vgs 720 mOhm @ 2.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FN
Dimension TO-220-3 Full Pack
Win Source Part Number 042306-RDN050N20
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RDN050N20 CAD Model

Description

The RDN050N20 is a MOSFET transistor manufactured by Rohm Semiconductor.

  • Maximum Power Dissipation: 30W
  • Applications: Power amplifiers, inverters, and switching circuits
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 200V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On at Id, Vgs: 720 mOhm @ 2.5A, 10V
  • Packaging: Bulk
  • Mounting Type: Through-hole
  • Supply and Demand Status: Balanced
  • Operating Temperature Range: 150°C (TJ)
  • Dimension: TO-220-3 Full Pack

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