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RDX050N50FU6

Part No RDX050N50FU6
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5A TO-220FM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 500pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 2.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 046148-RDX050N50FU6
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RDX050N50FU6 CAD Model

Description

The 046148-RDX050N50FU6 is a MOSFET transistor with N-channel polarity from Rohm Semiconductor.

  • Maximum Power Dissipation: 35W (Tc)
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current at 25°C: 5A (Ta)
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate-Source Voltage: ±30V
  • Mounting Type: Through hole
  • Packaging: TO-220FM
  • Maximum Rds On at Id,Vgs: 1.5 Ohm @ 2.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Maximum Gate Charge: 16nC @ 10V
  • Maximum Input Capacitance: 500pF @ 25V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $6.1827 $61.8270
23+ $5.0728 $116.6744
36+ $4.9145 $176.9220
49+ $4.7563 $233.0587
63+ $4.5981 $289.6803
85+ $4.1222 $350.3870
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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