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Same model may have multiple batches, images only for reference.
RE1C001ZPTL Real Image
Same model may have multiple batches, images only for reference.

RE1C001ZPTL

Part No RE1C001ZPTL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 0.1A EMT3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 1V @ 100μA
Max Input Capacitance 15pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 3.8 Ohm @ 100mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package EMT3F (SOT-416FL)
Dimension SC-89, SOT-490
Win Source Part Number 1091682-RE1C001ZPTL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RE1C001ZPTL CAD Model

Description

The Rohm Semiconductor MOSFET is a P-Channel device that operates with a maximum power dissipation of 150mW (Ta).

  • Manufacturer: Rohm Semiconductor
  • Channel Type: P-Channel
  • Power Dissipation: 150mW (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 100mA (Ta)
  • Maximum Rds On @ Id,Vgs: 3.8 Ohm @ 100mA, 4.5V
  • Gate-Source Threshold Voltage: 1V @ 100μA
  • Input Capacitance: 15pF @ 10V
  • Gate-Source Voltage: ±10V
  • Package: EMT3F (SOT-416FL)
  • Dimension: SC-89, SOT-490

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,185+ $0.0423 $50.1255
2,875+ $0.0348 $100.0500
4,455+ $0.0337 $150.1335
6,135+ $0.0326 $200.0010
7,940+ $0.0315 $250.1100
10,640+ $0.0282 $300.0480
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Availability: 120,000 pieces
MOQ: 1185 pcs
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