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Same model may have multiple batches, images only for reference.
RF4E110BNTR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RF4E110BNTR

Part No RF4E110BNTR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8-HUML
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 1200pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 11.1 mOhm @ 11A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-HUML2020L8 (2x2)
Dimension 8-PowerUDFN
Win Source Part Number 1092113-RF4E110BNTR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RF4E110BNTR CAD Model

Description

The Rohm Semiconductor RF4E110BNTR N-Channel MOSFET is an ideal solution for high-speed switching applications.

  • Drain-Source Breakdown Voltage: 30V
  • Maximum Power Dissipation: 2W (Ta)
  • Continuous Drain Current: 11A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Package: 6-HUML2020L8 (2x2)
  • Dimension: 8-PowerUDFN
  • Maximum Rds On @ Id,Vgs: 11.1 mOhm @ 11A, 10V
  • Maximum Gate-Source Voltage: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.2706 $50.0610
455+ $0.2221 $101.0555
700+ $0.2151 $150.5700
965+ $0.2082 $200.9130
1,245+ $0.2013 $250.6185
1,665+ $0.1804 $300.3660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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