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Same model may have multiple batches, images only for reference.
RGTVX6TS65DGC11 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RGTVX6TS65DGC11

Part No RGTVX6TS65DGC11
Manufacturer Rohm Semiconductor
Catalog IGBTs - Single
Description IGBT TRENCH FLD 650V 144A TO247N / IGBT Trench Field Stop 650 V 144 A 404 W Through Hole TO-247N
Datasheet
RGTVX6TS65DGC11 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Rohm Semiconductor
Series -
Package Tube
Product Status Not For New Designs
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 144 A
Current - Collector Pulsed (Icm) 320 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 80A
Power - Max 404 W
Switching Energy 2.65mJ (on), 1.8mJ (off)
Input Type Standard
Gate Charge 171 nC
Td (on/off) @ 25°C 45ns/201ns
Test Condition 400V, 80A, 10Ohm, 15V
Reverse Recovery Time (trr) 109 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247N
Base Product Number RGTVX6
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1354392-RGTVX6TS65DGC11
Ultra Librarian 3D Model Ultra Librarian RGTVX6TS65DGC11 CAD Model

Description

The RGTVX6TS65DGC11 is a single IGBT from Rohm Semiconductor.

  • Package: TO-247-3
  • Mounting Type: Through-hole
  • Collector Current: 144A
  • Collector-Emitter Breakdown Voltage: 650V
  • Power Rating: 404W
  • Reverse Recovery Time (trr): 109ns
  • Gate Charge: 171nC
  • Temperature Range: -40°C to 175°C
  • REACH: Unaffected

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54+ $5.5714 $300.8556
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