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RQ1A060ZPTR

Part No RQ1A060ZPTR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 6A TSMT8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 34nC @ 4.5V
Max Input Capacitance 2800pF @ 6V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 23 mOhm @ 6A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT8
Dimension 8-SMD, Flat Lead
Win Source Part Number 046378-RQ1A060ZPTR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RQ1A060ZPTR CAD Model

Description

The RQ1A060ZPTR is a P-channel MOSFET manufactured by Rohm Semiconductor.

  • Application: discrete semiconductor products
  • Mounting: TSMT8 package
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 6A @ 25°C
  • Maximum Gate-Charge: 34nC
  • Input Capacitance: 2800pF
  • Maximum Rds On: 23 mOhm @ 6A, 4.5V
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Gate-Source Voltage: ±10V
  • Power Dissipation: 700mW (Ta)
  • Temperature Range: up to 150°C (TJ)
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4874 $58.4880
290+ $0.4000 $116.0000
450+ $0.3875 $174.3750
620+ $0.3751 $232.5620
800+ $0.3624 $289.9200
1,070+ $0.3250 $347.7500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,700 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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