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Same model may have multiple batches, images only for reference.
RQ1A070ZPTR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RQ1A070ZPTR

Part No RQ1A070ZPTR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 7A TSMT8
Datasheet
RQ1A070ZPTR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 58nC @ 4.5V
Max Input Capacitance 7400pF @ 6V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 7A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT8
Dimension 8-SMD, Flat Lead
Win Source Part Number 046379-RQ1A070ZPTR
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RQ1A070ZPTR CAD Model

Description

The Rohm Semiconductor RQ1A070ZPTR is a P-channel MOSFET transistor with a maximum power dissipation of 700mW.

  • Application: discrete semiconductor products
  • Popularity Rating: medium
  • Maximum Rds On: 12 mOhm @ 7A and 4.5V
  • Gate-Source Threshold Voltage: 1V @ 1mA

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.2840 $51.1200
430+ $0.2331 $100.2330
665+ $0.2258 $150.1570
920+ $0.2185 $201.0200
1,185+ $0.2112 $250.2720
1,585+ $0.1894 $300.1990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,109 pieces
MOQ: 180 pcs
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