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RQ1C065UNTR

Part No RQ1C065UNTR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 6.5A TSMT8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 870pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 22 mOhm @ 6.5A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT8
Dimension 8-SMD, Flat Lead
Win Source Part Number 116581-RQ1C065UNTR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RQ1C065UNTR CAD Model

Description

This is an RQ1C065UNTR from Rohm Semiconductor with the Win Source Part Number 116581-RQ1C065UNTR.

  • Technology: N-channel MOSFET
  • Mounting: SMD (SMT)
  • Power Dissipation (Max): 700mW (Ta)
  • Category: Discrete Semiconductor Products
  • Drive Voltage: 1.5V, 4.5V
  • Operating Temperature Range: 150°C (TJ)
  • Case/Package: TSMT8 with a dimension of 8-SMD, Flat Lead
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 6.5A (Ta)
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Max Gate Charge: 11nC @ 4.5V
  • Max Input Capacitance: 870pF @ 10V
  • Maximum Gate-Source Voltage: ±10V
  • Maximum Rds On @ Id,Vgs: 22 mOhm @ 6.5A, 4.5V
  • Supply and Demand Status: balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4301 $51.6120
285+ $0.3530 $100.6050
440+ $0.3419 $150.4360
605+ $0.3309 $200.1945
785+ $0.3199 $251.1215
1,050+ $0.2868 $301.1400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,700 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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