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RQ3G100GNTB

Part No RQ3G100GNTB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 10A TSMT
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 8.4nC @ 10V
Max Input Capacitance 615pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 14.3 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HSMT (3.2x3)
Dimension 8-PowerVDFN
Win Source Part Number 1092624-RQ3G100GNTB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RQ3G100GNTB CAD Model

Description

This Rohm Semiconductor MOSFET with part number 1092624-RQ3G100GNTB is an N-channel component with a maximum power dissipation of 2W (Ta).

  • Manufacturer: Rohm Semiconductor
  • Part Number: 1092624-RQ3G100GNTB
  • Channel Type: N-Channel
  • Maximum Power Dissipation: 2W (Ta)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current @ 25°C: 10A (Ta)
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Rds On @ Id, Vgs: 14.3 mOhm @ 10A, 10V
  • Max Gate Charge: 8.4nC @ 10V
  • Mounting: SMD (SMT)
  • Package: 8-HSMT (3.2x3)
  • Operating Temperature Range: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
195+ $0.2612 $50.9340
410+ $0.2446 $100.2860
635+ $0.2364 $150.1140
910+ $0.2198 $200.0180
1,185+ $0.2116 $250.7460
1,480+ $0.2033 $300.8840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,490 pieces
MOQ: 195 pcs
Order Increment : 1 pcs
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