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Same model may have multiple batches, images only for reference.
RRF015P03GTL Real Image
Same model may have multiple batches, images only for reference.

RRF015P03GTL

Part No RRF015P03GTL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 1.5A TUMT3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 6.4nC @ 10V
Max Input Capacitance 230pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 320mW (Ta)
Maximum Rds On at Id,Vgs 160 mOhm @ 1.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TUMT3
Dimension 3-SMD, Flat Leads
Win Source Part Number 1092659-RRF015P03GTL
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RRF015P03GTL CAD Model

Description

The RRF015P03GTL is a P-channel MOSFET from Rohm Semiconductor.

  • Package: TUMT3, 3-SMD, Flat Leads
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 1.5A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Input Capacitance: 230pF @ 10V
  • Gate-Source Voltage: ±20V
  • Rds On: 160 mOhm @ 1.5A, 10V
  • Drive Voltage: 4V and 10V
  • Power Dissipation: 320mW (Ta)
  • Temperature Range: 150°C (TJ)

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