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RS1G201ATTB1

Part No RS1G201ATTB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 20A/78A 8HSOP
Datasheet
Sample
Rohs State rohs
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Win Source Part Number WS1197412-RS1G201ATTB1
Manufacturer Rohm Semiconductor
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Rds On (Max) @ Id, Vgs 5.2mOhm @ 20A, 10V
Power Dissipation (Max) 3W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Ultra Librarian 3D Model Ultra Librarian RS1G201ATTB1 CAD Model

Description

The Rohm Semiconductor P-channel MOSFET is a high-performance transistor suitable for a wide range of electronic applications. It has a drain to source voltage of 40V and a low on-resistance of 5.2mOhm at 20A and 10V. The MOSFET can handle a maximum power dissipation of 3W (Ta) and 40W (Tc), making it suitable for high-power applications. It operates in a wide temperature range from -55°C to 150°C, ensuring reliable performance in harsh environments. The Rohm Semiconductor P-channel MOSFET is an active product and is commonly used in power management systems, motor control circuits, and automotive applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.1507 $51.6168
57+ $1.7647 $100.5879
88+ $1.7096 $150.4448
121+ $1.6544 $200.1824
157+ $1.5993 $251.0901
210+ $1.4338 $301.0980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,050 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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