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RSJ400N06TL

Part No RSJ400N06TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 40A LTPS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 52nC @ 10V
Max Input Capacitance 2400pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 40A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LPTS
Dimension SC-83
Win Source Part Number 1092795-RSJ400N06TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RSJ400N06TL CAD Model

Description

The Rohm Semiconductor RSJ400N06TL is an N-channel MOSFET with a maximum power dissipation of 50W (Tc).

  • Manufacturer: Rohm Semiconductor
  • Channel Type: N-channel
  • Power Dissipation: 50W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 40A (Ta)
  • Application: Discrete semiconductor products
  • Mounting: SMD with an LPTS case/package
  • Maximum Rds On: 16 mOhm @ 40A and 10V
  • Gate-Source Threshold Voltage: 3V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 52nC @ 10V
  • Maximum Input Capacitance: 2400pF @ 10V
  • Drive Voltage: 10V
  • Product Recommendation: Not recommended for new designs
  • Packaging: Reel
  • Supply and Demand Status: Balanced

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