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Same model may have multiple batches, images only for reference.
RSL020P03FRATR Real Image
Same model may have multiple batches, images only for reference.

RSL020P03FRATR

Part No RSL020P03FRATR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2A TUMT6  /  P-Channel 30 V 2A (Ta) 1W (Ta) Surface Mount TUMT6
Datasheet
RSL020P03FRATR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.9 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 10 V
Power Dissipation (Max) 1W (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package TUMT6
Package / Case 6-SMD, Flat Leads
Base Product Number RSL020
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names RSL020P03FRACT,RSL020P03FRADKR
Standard Package 3,000
Win Source Part Number 1118919-RSL020P03FRATR
Ultra Librarian 3D Model Ultra Librarian RSL020P03FRATR CAD Model

Description

The Rohm Semiconductor RSL020P03FRATR is a P-Channel MOSFET transistor that is suitable for use in a variety of electronic devices.

  • Drain to Source Voltage: 30V
  • Current: Up to 2A
  • Maximum On-Resistance: 120mOhm
  • Gate Charge: 3.9 nC
  • Package: TUMT6
  • Maximum Operating Temperature: 150°C

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