The Rohm Semiconductor RSL020P03TR is a P-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 2A at 25°C. It is designed for use in discrete semiconductor products and features a TUMT6 case/package with 6-SMD flat leads. The maximum gate-source voltage is ±20V, and the maximum Rds On at Id,Vgs is 120 mOhm at 2A and 10V. The device also has a maximum gate charge of 3.9nC at 5V and a maximum input capacitance of 350pF at 10V. The drive voltage is 4V for max Rds On and 10V for min Rds On. This product is not for new designs and has a medium popularity in the market.