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Same model may have multiple batches, images only for reference.
RSS075P03TB Real Image
Same model may have multiple batches, images only for reference.

RSS075P03TB

Part No RSS075P03TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 7.5A 8-SOIC
Datasheet
RSS075P03TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 30nC @ 5V
Max Input Capacitance 2900pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 21 mOhm @ 7.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 103079-RSS075P03TB
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RSS075P03TB CAD Model

Description

The Rohm Semiconductor RSS075P03TB is a P-Channel MOSFET designed for use in various electronic applications.

  • Maximum Power Dissipation: 2W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Win Source Part Number: 103079-RSS075P03TB
  • Supply and Demand Status: and sufficient supply and demand status
  • Technology: MOSFET
  • Polarity: P-Channel
  • Continuous Drain Current @ 25°C: 7.5A (Ta)
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 21 mOhm @ 7.5A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3128 $57.8680
455+ $0.2566 $116.7530
700+ $0.2487 $174.0900
960+ $0.2407 $231.0720
1,245+ $0.2326 $289.5870
1,665+ $0.2086 $347.3190
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Availability: 1,100 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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