The Rohm Semiconductor RSS100N03FU6TB is an N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 10A @ 25°C.

• Maximum Rds On: 13 mOhm @ 10A and 10V
• Gate-Source Threshold Voltage: 2.5V
• Maximum Gate-Source Voltage: 20V
• Maximum Input Capacitance: 1070pF @ 10V
• Maximum Gate Charge: 14nC @ 5V
• Package: 8-SOP
• Category: discrete semiconductor products
• Power Dissipation: 2W @ Ta of 150°C
• Drive Voltage: 4V (max Rds On) and 10V (min Rds On)
• Status: not for new designs
• Supply and demand: limited supply and demand