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RSS130N03FU6TB

Part No RSS130N03FU6TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 35nC @ 5V
Max Input Capacitance 2000pF @ 10V
Maximum Gate-Source Voltage 20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 8.1 mOhm @ 13A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 046402-RSS130N03FU6TB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RSS130N03FU6TB CAD Model

Description

The Rohm Semiconductor MOSFET is a high-performance N-channel power MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 2W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 13A (Ta)
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 35nC @ 5V
  • Maximum Input Capacitance: 2000pF @ 10V
  • Maximum Rds On @ Id,Vgs: 8.1 mOhm @ 13A, 10V
  • Package: 8-SOIC package
  • Status: not for new designs

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3128 $57.8680
455+ $0.2566 $116.7530
700+ $0.2487 $174.0900
960+ $0.2407 $231.0720
1,245+ $0.2326 $289.5870
1,665+ $0.2086 $347.3190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,047 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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