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Same model may have multiple batches, images only for reference.
RUM002N05T2L Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RUM002N05T2L

Part No RUM002N05T2L
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 0.2A 3VMT
Datasheet
RUM002N05T2L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 25pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 200mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VMT3
Dimension SOT-723
Win Source Part Number 027651-RUM002N05T2L
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RUM002N05T2L CAD Model

Description

The Rohm Semiconductor RUM002N05T2L is an N-channel MOSFET with a maximum power dissipation of 150mW (Ta) and a maximum drain-source breakdown voltage of 50V.

  • Continuous Drain Current: 200mA (Ta)
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Package: VMT3 package with SOT-723 dimensions
  • Maximum Junction Temperature: 150°C
  • Maximum Rds On: 2.2 Ohm @ 200mA, 4.5V
  • Suitability: Suitable for a range of applications
  • Packaging: Available in reel packaging
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,180+ $0.0425 $50.1500
2,515+ $0.0398 $100.0970
3,900+ $0.0385 $150.1500
5,590+ $0.0358 $200.1220
7,270+ $0.0344 $250.0880
9,065+ $0.0331 $300.0515
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 80,000 pieces
MOQ: 1180 pcs
Order Increment : 1 pcs
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