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Same model may have multiple batches, images only for reference.
RUR020N02TL Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RUR020N02TL

Part No RUR020N02TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2A TSMT3
Datasheet
RUR020N02TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 2nC @ 4.5V
Max Input Capacitance 180pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 540mW (Ta)
Maximum Rds On at Id,Vgs 105 mOhm @ 2A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT3
Dimension SC-96
Win Source Part Number 046504-RUR020N02TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RUR020N02TL CAD Model

Description

The Rohm Semiconductor 046504-RUR020N02TL is an N-Channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current @ 25°C of 2A (Ta).

  • Power Dissipation (Max): 540mW (Ta)
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Rds On @ Id,Vgs: 105 mOhm @ 2A, 4.5V
  • Suitable for: Use in various applications, including discrete semiconductor products
  • Package Type: TSMT3
  • Dimension: SC-96
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
440+ $0.1138 $50.0720
1,075+ $0.0934 $100.4050
1,660+ $0.0905 $150.2300
2,285+ $0.0876 $200.1660
2,955+ $0.0847 $250.2885
3,955+ $0.0759 $300.1845
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,090 pieces
MOQ: 440 pcs
Order Increment : 1 pcs
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