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RUR040N02TL

Part No RUR040N02TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 4A TSMT3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1.3V @ 1mA
Max Gate Charge 8nC @ 4.5V
Max Input Capacitance 680pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 35 mOhm @ 4A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT3
Dimension SC-96
Win Source Part Number 100332-RUR040N02TL
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RUR040N02TL CAD Model

Description

The RUR040N02TL is an N-channel power MOSFET manufactured by Rohm Semiconductor. This MOSFET is designed for high-efficiency switching applications, featuring low on-resistance to minimize power loss. The 'TL' suffix likely refers to a specific package type, optimized for thermal performance and ease of mounting.

Applications:

  • DC-DC Converters
  • Load Switching
  • Power Management in Portable Devices
  • Motor Control

Features

  • N-Channel MOSFET
  • Low On-Resistance (RDS(on))
  • High-Speed Switching
  • Surface Mount Package (likely a Power Package)
  • Logic Level Gate Drive

Benefits

  • Increases energy efficiency due to low on-resistance, which reduces heat generation and power dissipation.
  • Allows for faster switching speeds, making it suitable for high-frequency applications.
  • Reduces gate drive power requirements, simplifying circuit design.
  • Suitable for compact designs due to its surface mount package.

Technical Specifications:

  • Type: N-Channel MOSFET
  • Voltage Rating (VDS): 25V (Check Datasheet)
  • Continuous Drain Current (ID): (Value depends on operating conditions; Refer to datasheet)
  • On-Resistance (RDS(on)): (Value depends on VGS and ID; Refer to datasheet)
  • Gate-Source Voltage (VGS): (Check Datasheet)
  • Package: TL (Check Datasheet for package dimensions)

The RUR040N02TL MOSFET offers a balance of performance and efficiency, making it a good choice for applications that demand efficient power switching with minimal power loss. Its low on-resistance contributes to improved system efficiency and reduced thermal stress on components.

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1455 $50.1975
735+ $0.1362 $100.1070
1,145+ $0.1315 $150.5675
1,640+ $0.1221 $200.2440
2,130+ $0.1174 $250.0620
2,665+ $0.1127 $300.3455
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 33,400 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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