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Same model may have multiple batches, images only for reference.
RV1C001ZPT2L Real Image
Same model may have multiple batches, images only for reference.

RV1C001ZPT2L

Part No RV1C001ZPT2L
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 0.1A VML0806
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 1V @ 100μA
Max Input Capacitance 15pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 100mW (Ta)
Maximum Rds On at Id,Vgs 3.8 Ohm @ 100mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VML0806
Dimension 3-SMD, No Lead
Win Source Part Number 1093099-RV1C001ZPT2L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RV1C001ZPT2L CAD Model

Description

The Rohm RV1C001ZPT2L is a P-channel MOSFET with a maximum drain-source breakdown voltage of 20V and a maximum continuous drain current of 100mA (Ta).

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 100mA (Ta)
  • Gate-Source Threshold Voltage: 1V @ 100μA
  • Maximum Rds On: 3.8 Ohm @ 100mA, 4.5V
  • Mounting Technology: SMD (SMT)
  • Packaging: Reel
  • Maximum Gate-Source Voltage: ±10V
  • Maximum Input Capacitance: 15pF @ 10V
  • Application: Discrete Semiconductor Products
  • Maximum Power Dissipation: 100mW (Ta)
  • Suitable For: Industrial and Power Management

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1,290+ $0.0899 $115.9710
1,995+ $0.0870 $173.5650
2,745+ $0.0842 $231.1290
3,550+ $0.0815 $289.3250
4,750+ $0.0730 $346.7500
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Availability: 80,000 pieces
MOQ: 530 pcs
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