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RV2C010UNT2L

Part No RV2C010UNT2L
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 1A VML1006
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 40pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 400mW (Ta)
Maximum Rds On at Id,Vgs 470 mOhm @ 500mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VML1006
Dimension SC-101, SOT-883
Win Source Part Number 1093102-RV2C010UNT2L
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RV2C010UNT2L CAD Model

Description

The RV2C010UNT2L is an N-channel MOSFET manufactured by Rohm Semiconductor.

  • Manufacturer: Rohm Semiconductor
  • Channel Type: N-Channel
  • Power Dissipation: 400mW (Ta)
  • Operating Temperature Range: 150°C (TJ)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 1A (Ta)
  • Maximum Rds On @ Id,Vgs: 470 mOhm @ 500mA, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Maximum Input Capacitance: 40pF @ 10V
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
425+ $0.1180 $50.1500
905+ $0.1105 $100.0025
1,405+ $0.1068 $150.0540
2,015+ $0.0993 $200.0895
2,620+ $0.0956 $250.4720
3,270+ $0.0918 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 48,000 pieces
MOQ: 425 pcs
Order Increment : 1 pcs
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