The Rohm Semiconductor RW1E015RPT2R is a P-Channel MOSFET type discrete semiconductor product. It has a maximum power dissipation of 400mW (Ta) and can operate at a temperature range of 150°C (TJ). The device comes in a 6-WEMT case/package and has a drain-source breakdown voltage of 30V. The continuous drain current at 25°C is 1.5A (Ta). The gate-source threshold voltage is 2.5V @ 1mA. The max gate charge is 6.5nC @ 10V and the max input capacitance is 230pF @ 10V. The maximum Rds On at Id,Vgs is 160 mOhm @ 1.5A, 10V. The supply and demand status is sufficient.