The 836183-RXH090N03TB1 is a single N-channel MOSFET from Rohm Semiconductor.

• Description: It is a surface mount component with an 8-SOIC package.
• Drain-to-source voltage: 30V
• Continuous drain current: 9A @ 25°C
• On-resistance: 17mOhm @ 9A
• Gate threshold voltage: 2.5V
• Maximum power dissipation: 2W @ ambient temperature
• Gate charge: 6.8nC @ gate-source voltage of 5V
• Input capacitance: 440pF @ drain-source voltage of 10V
• Description: The RXH090N03TB1 is suitable for various applications such as power management, motor control, and switching circuits. It provides efficient and reliable performance in high-power applications. The MOSFET is a high-quality component that meets industry standards and specifications. With its compact size and excellent electrical characteristics, this N-channel MOSFET is an ideal choice for demanding electronic systems.