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Same model may have multiple batches, images only for reference.
SCT2080KEGC11 Real Image
Same model may have multiple batches, images only for reference.

SCT2080KEGC11

Part No SCT2080KEGC11
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description DIODE N-CH 1200V 40A TO-247AC / N-Channel 1200 V 40A (Tc) 262W (Tc) Through Hole TO-247N
Datasheet
SCT2080KEGC11 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Rohm Semiconductor
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 117mOhm @ 10A, 18V
Vgs(th) (Max) @ Id 4V @ 4.4mA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 18 V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 2080 pF @ 800 V
Power Dissipation (Max) 262W (Tc)
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
Base Product Number SCT2080
Standard Package 450
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1341050-SCT2080KEGC11
Ultra Librarian 3D Model Ultra Librarian SCT2080KEGC11 CAD Model

Description

The SCT2080KEGC11 is a SiCFET (Silicon Carbide) N-channel FET.

  • Drain to Source Voltage (Vdss): 1200 V
  • Power Dissipation (Max): 262W (Tc)
  • Mounting Type: Through Hole
  • Package: TO-247-3
  • Supplier Device Package: TO-247N
  • Drive Voltage (Max Rds On, Min Rds On): 18V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
  • Vgs(th) (Max) @ Id: 4V @ 4.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 800 V
  • Applications: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs applications

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