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SCT2160KEC Real Image
Same model may have multiple batches, images only for reference.

SCT2160KEC

Part No SCT2160KEC
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1200V 22A TO-247 / Trans MOSFET N-CH SiC 1.2KV 22A 3-Pin(3+Tab) TO-247 Tube
Datasheet
SCT2160KEC Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Tube
Channel Type Type N
Technology SiCFET (Silicon Carbide)
Drain Source Voltage 1200V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs(th) (Maximum) @ Id 4V @ 2.5mA
Gate Charge (Qg) (Maximum) @ Vgs 62nC @ 18V
Input Capacitance (Ciss) (Maximum) @ Vds 1200pF @ 800V
Vgs (Maximum) +22V, -6V
Power Dissipation (Maximum) 165W (Tc)
Rds On (Maximum) @ Id, Vgs 208 mOhm @ 7A, 18V
Operating Temperature Range 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 794017-SCT2160KEC
Popularity Medium
Supply and Demand Status Limited
Family Name SCT2160KE
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2031
Ultra Librarian 3D Model Ultra Librarian SCT2160KEC CAD Model

Description

The 794017-SCT2160KEC from Rohm Semiconductor is a SiCFET (Silicon Carbide) transistor with a TO-247-3 package.

  • Maximum Power Dissipation: 165W (Tc)
  • Maximum Continuous Drain Current: 22A (Tc)
  • Drain-Source Voltage: 1200V
  • Gate-Source Threshold Voltage: 4V @ 2.5mA
  • Gate Charge: 62nC @ 18V
  • Input Capacitance: 1200pF @ 800V
  • Rds On: 208 mOhm @ 7A, 18V
  • Popularity: Medium
  • Supply and Demand Status: Limited
  • Cross-Reference: SCTWA20N120, SCT20N120, CMF10120D, LSIC1MO120E0120
  • Estimated EOL Date: 2031
  • ECCN: EAR99

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1+ $58.2401 $58.2401
3+ $47.7867 $143.3601
4+ $46.2934 $185.1736
5+ $44.8000 $224.0000
7+ $43.3067 $303.1469
9+ $38.8267 $349.4403
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