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SCT2H12NZGC11 Real Image
Same model may have multiple batches, images only for reference.

SCT2H12NZGC11

Part No SCT2H12NZGC11
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1700V 3.7A
Datasheet
SCT2H12NZGC11 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Tube
Channel Type Type N
Technology SiCFET (Silicon Carbide)
Drain Source Voltage 1700V
Current - Continuous Drain (Id) @ 25°C 3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs(th) (Maximum) @ Id 4V @ 900μA
Gate Charge (Qg) (Maximum) @ Vgs 14nC @ 18V
Input Capacitance (Ciss) (Maximum) @ Vds 184pF @ 800V
Vgs (Maximum) +22V, -6V
Power Dissipation (Maximum) 35W (Tc)
Rds On (Maximum) @ Id, Vgs 1.5 Ohm @ 1.1A, 18V
Operating Temperature Range 175°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-3PFM
Package TO-3PFM, SC-93-3
Win Source Part Number 794018-SCT2H12NZGC11
Family Name SCT2H12NZ
Introduction Date December 16, 2015
ECCN EAR99
Estimated EOL Date 2034
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SCT2H12NZGC11 CAD Model

Description

The 794018-SCT2H12NZGC11 from Rohm Semiconductor is a SiCFET (Silicon Carbide) transistor that comes in a TO-3PFM package.

  • Channel Type: N
  • Drain-Source Voltage: 1700V
  • Maximum Power Dissipation: 35W (Tc)
  • Maximum Rds On: 1.5 Ohm @ 1.1A, 18V

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