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SCT4062KRHRC15

Part No SCT4062KRHRC15
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 1200V, 26A, 4-PIN THD, TRENCH-ST / N-Channel 1200 V 26A (Tc) 115W Through Hole TO-247-4L
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 81mOhm @ 12A, 18V
Vgs(th) (Max) @ Id 4.8V @ 6.45mA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 18 V
Vgs (Max) +21V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1498 pF @ 800 V
FET Feature -
Power Dissipation (Max) 115W
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355202-SCT4062KRHRC15
Ultra Librarian 3D Model Ultra Librarian SCT4062KRHRC15 CAD Model

Description

The SCT4062KRHRC15 is a SiCFET (Silicon Carbide) MOSFET manufactured by Rohm Semiconductor. It belongs to the automotive series and is qualified to AEC-Q101 standards.

  • FET Type: MOSFET N-Channel SiCFET
  • Technology: SiC
  • Vdss: 1200V
  • Id @ 25°C: 26A
  • Power Dissipation (Max): 115W
  • Qg @ Vgs: 64nC @ 18V
  • Rds On (Max) @ Id, Vgs: 81mOhm @ 12A
  • Vgs: +21V/-4V
  • REACH SVHC Status: Unaffected
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $19.7608 $59.2824
7+ $16.2140 $113.4980
10+ $15.7073 $157.0730
14+ $15.2006 $212.8084
18+ $14.6939 $264.4902
23+ $13.1738 $302.9974
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,039 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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