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Same model may have multiple batches, images only for reference.
SH8K12 Real Image
Same model may have multiple batches, images only for reference.

SH8K12

Part No SH8K12
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 5A 8SOP
Datasheet
SH8K12 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A
Maximum Rds On at Id,Vgs 42 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 4nC @ 5V
Max Input Capacitance 250pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 046851-SH8K12
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SH8K12 CAD Model

Description

The Rohm Semiconductor 046851-SH8K12 is a 2 N-Channel (Dual) FET designed for use in the electronics industry.

  • Gate Type: The FET has a logic level gate feature.
  • Package: Packaged in 8-SOP.
  • Maximum Power Dissipation: 2W.
  • Temperature Range: 150°C (TJ).
  • Drain-Source Breakdown Voltage: 30V.
  • Continuous Drain Current: 5A @ 25°C.
  • Gate-Source Threshold Voltage: 2.5V @ 1mA.
  • Maximum Gate Charge: 4nC @ 5V.
  • Maximum Input Capacitance: 250pF @ 10V.
  • Maximum Rds On: 42 mOhm @ 5A, 10V.

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