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Same model may have multiple batches, images only for reference.
SH8K1TB1 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

SH8K1TB1

Part No SH8K1TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 5A SOP8
Datasheet
SH8K1TB1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A
Maximum Rds On at Id,Vgs 51 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 5.5nC @ 5V
Max Input Capacitance 230pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 028318-SH8K1TB1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SH8K1TB1 CAD Model

Description

The Rohm Semiconductor 028318-SH8K1TB1 is a dual N-channel FET with logic level gate feature.

  • Maximum Power Dissipation: 2W.
  • Drain-Source Breakdown Voltage: 30V.
  • Continuous Drain Current: 5A @ 25°C.
  • Gate-Source Threshold Voltage: 2.5V @ 1mA.
  • Maximum Gate Charge: 5.5nC @ 5V.
  • Maximum Input Capacitance: 230pF @ 10V.
  • Maximum Rds On: 51 mOhm @ 5A, 10V.
  • Application: Suitable for use in discrete semiconductor products.
  • Packaging: Packaged on a reel.
  • Case/Package: 8-SOP case/package is suitable for surface-mount technology (SMT) mounting.

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5018 $50.1800
245+ $0.4118 $100.8910
380+ $0.3989 $151.5820
520+ $0.3860 $200.7200
670+ $0.3732 $250.0440
900+ $0.3346 $301.1400
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Availability: 17,500 pieces
MOQ: 100 pcs
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