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Same model may have multiple batches, images only for reference.
SH8K3TB1 Real Image
Same model may have multiple batches, images only for reference.

SH8K3TB1

Part No SH8K3TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 7A SOP8
Datasheet
SH8K3TB1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Cut Reel
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7A
Maximum Rds On at Id,Vgs 24 mOhm @ 7A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 11.8nC @ 5V
Max Input Capacitance 600pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1095648-SH8K3TB1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SH8K3TB1 CAD Model

Description

The SH8K3TB1 is a dual N-Channel FET manufactured by Rohm Semiconductor.

  • Win Source Part Number: 1095648
  • Product Type: Discrete Semiconductor Product
  • Maximum Power Dissipation: 2W
  • Operating Temperature: 150°C (TJ)
  • FET Feature: Logic Level Gate
  • Package Type: Cut Reel
  • Mounting: SMD (SMT)
  • Supply and Demand Status: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7718 $50.1670
160+ $0.6333 $101.3280
245+ $0.6135 $150.3075
340+ $0.5937 $201.8580
440+ $0.5740 $252.5600
585+ $0.5146 $301.0410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,648 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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