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Same model may have multiple batches, images only for reference.
SH8M12 Real Image
Same model may have multiple batches, images only for reference.

SH8M12

Part No SH8M12
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 5A/4.5A SOP8
Datasheet
SH8M12 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A, 4.5A
Maximum Rds On at Id,Vgs 42 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 4nC @ 5V
Max Input Capacitance 250pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 211604-SH8M12
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SH8M12 CAD Model

Description

The Rohm Semiconductor SH8M12 is an N and P-channel FET with a logic level gate feature.

  • Maximum Power Dissipation: 2W.
  • Operating Temperature: operates in a temperature range of 150°C.
  • Drain-Source Breakdown Voltage: 30V.
  • Continuous Drain Current: 5A, 4.5A @ 25°C.
  • Package: comes in an 8-SOP package.
  • Mounting: mounted using SMD (SMT) technology.
  • Availability: Supply and demand status is balanced.

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Pricing & Ordering

Quantity Unit Price Ext. Price
235+ $0.2506 $58.8910
565+ $0.2056 $116.1640
870+ $0.1998 $173.8260
1,200+ $0.1929 $231.4800
1,545+ $0.1871 $289.0695
2,070+ $0.1675 $346.7250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,302 pieces
MOQ: 235 pcs
Order Increment : 1 pcs
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