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SH8M12TB1

Part No SH8M12TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 5A/4.5A SOP8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A, 4.5A
Maximum Rds On at Id,Vgs 42 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 4nC @ 5V
Max Input Capacitance 250pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 211605-SH8M12TB1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SH8M12TB1 CAD Model

Description

The SH8M12TB1 is an electronic component manufactured by Rohm Semiconductor.

  • Availability: Its supply and demand status is sufficient.
  • Win Source Part Number: This product is a win source part number 211605.
  • Specifications: It comes with specifications that provide excellent performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5454 $51.8130
225+ $0.4476 $100.7100
350+ $0.4336 $151.7600
480+ $0.4196 $201.4080
620+ $0.4056 $251.4720
830+ $0.3636 $301.7880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
*Need More Quantity? *Request a Bulk Quantity Quotation?

Shipping Information

Shipped from HK warehouse
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