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Same model may have multiple batches, images only for reference.
SP8J1FU6TB Real Image
Same model may have multiple batches, images only for reference.

SP8J1FU6TB

Part No SP8J1FU6TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 5A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A
Maximum Rds On at Id,Vgs 42 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 16nC @ 5V
Max Input Capacitance 1400pF @ 10V
Maximum Power Dissipation 2W
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1101451-SP8J1FU6TB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SP8J1FU6TB CAD Model

Description

The Rohm Semiconductor SP8J1FU6TB is a P-channel MOSFET transistor manufactured.

  • Popularity: medium
  • Supply and Demand Status: balanced
  • Maximum Drain-Source Voltage: 30V
  • Maximum Continuous Drain Current: 5A
  • On-Resistance: 42 mOhm @ 5A and 10V gate-source voltage

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120+ $0.9840 $118.0800
185+ $0.9533 $176.3605
255+ $0.9225 $235.2375
325+ $0.8917 $289.8025
435+ $0.7995 $347.7825
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Availability: 2,500 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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