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Same model may have multiple batches, images only for reference.
SP8K22FRATB Rohm Semiconductor
Same model may have multiple batches, images only for reference.

SP8K22FRATB

Part No SP8K22FRATB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 45V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Rds On (Max) @ Id, Vgs 46mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 10V
Power - Max 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP
Base Product Number SP8K22
Other Names SP8K22FRATBCT,SP8K22FRATBTR,SP8K22FRATBDKR
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1278556-SP8K22FRATB
Ultra Librarian 3D Model Ultra Librarian SP8K22FRATB CAD Model

Description

The SP8K22FRATB is a dual N-Channel MOSFET transistor designed for use in discrete semiconductor products, specifically in transistors - FETs, MOSFETs - Arrays.

  • Drain to Source Voltage: 45V
  • Continuous Drain Current: 4.5A @ 25°C
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
  • Gate Charge: 9.6nC @ 5V
  • Input Capacitance: 550pF @ 10V
  • Power Dissipation: 2W
  • Operating Temperature Range: 150°C (TJ)

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