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Same model may have multiple batches, images only for reference.
SP8K2FU6TB Real Image
Same model may have multiple batches, images only for reference.

SP8K2FU6TB

Part No SP8K2FU6TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6A 8SOIC
Datasheet
SP8K2FU6TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 30 mOhm @ 6A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 10.1nC @ 5V
Max Input Capacitance 520pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 047202-SP8K2FU6TB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SP8K2FU6TB CAD Model

Description

The SP8K2FU6TB is a dual N-channel MOSFET from Rohm Semiconductor that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 6A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 10.1nC @ 5V
  • Maximum Input Capacitance: 520pF @ 10V
  • Maximum Rds On at Id, Vgs: 30 mOhm @ 6A, 10V
  • Operating Temperature Range: 150°C (TJ)

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315+ $0.3695 $116.3925
485+ $0.3580 $173.6300
670+ $0.3464 $232.0880
865+ $0.3349 $289.6885
1,155+ $0.3002 $346.7310
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