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Same model may have multiple batches, images only for reference.
SP8M2 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

SP8M2

Part No SP8M2
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 3.5A 8SOIC
Datasheet
SP8M2 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.5A
Maximum Rds On at Id,Vgs 83 mOhm @ 3.5A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 3.5nC @ 5V
Max Input Capacitance 140pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 192320-SP8M2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SP8M2 CAD Model

Description

The SP8M2 from Rohm Semiconductor is an N and P-channel FET with a standard feature.

  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.5A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Rds On at Id, Vgs: 83 mOhm @ 3.5A, 10V
  • Maximum Gate Charge: 3.5nC @ 5V
  • Maximum Input Capacitance: 140pF @ 10V
  • Case/Package: 8-SOP

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