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Same model may have multiple batches, images only for reference.
SP8M21FRATB Rohm Semiconductor
Same model may have multiple batches, images only for reference.

SP8M21FRATB

Part No SP8M21FRATB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SP8M21FRATB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 45V
Current - Continuous Drain (Id) @ 25°C 6A (Ta), 4A (Ta)
Rds On (Max) @ Id, Vgs 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 21.6nC @ 5V, 28nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 10V, 2400pF @ 10V
Power - Max 2W
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP
Base Product Number SP8M21
Other Names SP8M21FRATBTR,SP8M21FRATBCT,SP8M21FRATBDKR
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
Win Source Part Number 1278554-SP8M21FRATB
Ultra Librarian 3D Model Ultra Librarian SP8M21FRATB CAD Model

Description

The SP8M21FRATB from Rohm Semiconductor is a N and P-Channel FET type transistor with a drain to source voltage (Vdss) of 45V and a continuous drain current (Id) of 6A (Ta) and 4A (Ta) @ 25°C.

  • Drain to Source Voltage (Vdss): 45V
  • Continuous Drain Current (Id): 6A (Ta) and 4A (Ta) @ 25°C
  • Maximum Rds On: 25mOhm @ 6A, 10V and 46mOhm @ 4A, 10V
  • Gate Charge (Qg): 21.6nC @ 5V and 28nC @ 5V
  • Input Capacitance (Ciss): 1400pF @ 10V and 2400pF @ 10V
  • Maximum Power: 2W
  • Temperature Range: 150°C

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