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Same model may have multiple batches, images only for reference.
SP8M8FU6TB Real Image
Same model may have multiple batches, images only for reference.

SP8M8FU6TB

Part No SP8M8FU6TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 6A/4.5A 8SOIC
Datasheet
SP8M8FU6TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A, 4.5A
Maximum Rds On at Id,Vgs 30 mOhm @ 6A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 10.1nC @ 5V
Max Input Capacitance 520pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 107619-SP8M8FU6TB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SP8M8FU6TB CAD Model

Description

The supply and demand status is balanced. This component is not for new designs and is a discrete semiconductor product.

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Case/Package: 8-SOP
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 6A and 4.5A
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Max Gate Charge: 10.1nC @ 5V
  • Max Input Capacitance: 520pF @ 10V
  • Maximum Rds On @ Id,Vgs: 30 mOhm @ 6A, 10V

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