The Rohm Semiconductor TT8U2TR MOSFET is a high-quality component suitable for use in a wide range of electronic devices.

• Schottky Diode: Isolated
• Polarity: P-channel
• Power Dissipation (Max): 1.25W (Ta)
• Drive Voltage (Max Rds On, min Rds On): 1.5V, 4.5V
• Mounting Technology: SMT
• Package: Reel - TR
• Operating Temperature (Max): 150°C (TJ)
• Category: Discrete semiconductor products
• Case / Package: 8-TSST
• Dimension: 8-SMD, flat lead
• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current @ 25°C: 2.4A (Ta)
• Gate-Source Threshold Voltage: 1V @ 1mA
• Gate Charge (Max): 6.7nC @ 4.5V
• Input Capacitance (Max): 850pF @ 10V
• Gate-Source Voltage (Max): ±10V
• Rds On (Max) @ Id,Vgs: 105 mOhm @ 2.4A, 4.5V
• Status: Active