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UMF8N

Part No UMF8N
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description Power management (dual transistors)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Rohm Semiconductor
Win Source Part Number 1277294-UMF8N
Manufacturer Homepage www.rohm.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UMF8N CAD Model

Description

The UMF8N is a dual N-channel MOSFET manufactured by Rohm Semiconductor, designed for low-voltage, low on-resistance switching applications in space-constrained environments.

Applications

  • Load Switching
  • DC-DC Converters
  • Power Management Circuits
  • Portable Electronics
  • Small Signal Amplification

Features

  • Low on-resistance (RDS(on))
  • Small Mold Package (SMP): UMF8 (0.65mm height)
  • Low Threshold Voltage (Vth)
  • High-Speed Switching
  • Dual N-Channel MOSFET Configuration
  • RoHS Compliant (Pb-free)

Benefits

  • Enhanced Efficiency: Low on-resistance minimizes power losses during switching.
  • Compact Design: Ultra-small UMF8 package saves valuable PCB space.
  • Simplified Drive Circuitry: Low threshold voltage allows direct drive from low-voltage logic.
  • Reduced Switching Losses: High-speed switching capability reduces energy wasted during transitions.
  • Design Flexibility: Dual MOSFET configuration enables various circuit topologies.

Additional Details

The UMF8N is characterized by its ultra-small UMF8 package, which is only 0.65mm in height, making it ideal for use in extremely compact electronic devices. Its low on-resistance significantly reduces power dissipation, resulting in improved efficiency in switching applications. The low threshold voltage facilitates direct drive from low-voltage logic circuits, simplifying the design process and reducing the need for additional components.

The UMF8N is commonly used in load switching applications, where it controls the flow of power to different parts of a circuit. It's also employed in DC-DC converters to efficiently regulate voltage levels. Its high-speed switching capability minimizes switching losses, further contributing to overall system efficiency. The dual MOSFET configuration allows for increased design flexibility, such as using both MOSFETs in parallel to lower the effective on-resistance or using them independently in separate circuits.

The UMF8N complies with RoHS standards, ensuring that it is free from hazardous substances like lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBBs), and polybrominated diphenyl ethers (PBDEs), making it an environmentally responsible choice for electronic product manufacturers.

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