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Same model may have multiple batches, images only for reference.
US6J11TR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

US6J11TR

Part No US6J11TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 1.3A TUMT6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 1.3A
Maximum Rds On at Id,Vgs 260 mOhm @ 1.3A, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 2.4nC @ 4.5V
Max Input Capacitance 290pF @ 6V
Maximum Power Dissipation 320mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UMT6
Win Source Part Number 1116727-US6J11TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian US6J11TR CAD Model

Description

The Rohm Semiconductor 2 P-Channel Dual FET is a logic level gate component that can operate at a maximum temperature of 150°C.

  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 1.3A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Gate Charge: 2.4nC @ 4.5V
  • Maximum Input Capacitance: 290pF @ 6V
  • Maximum Rds On: 260 mOhm @ 1.3A and 4.5V
  • Case/Package: UMT6
  • Maximum Power Dissipation: 320mW

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Pricing & Ordering

Quantity Unit Price Ext. Price
500+ $0.1161 $58.0500
1,065+ $0.1087 $115.7655
1,655+ $0.1049 $173.6095
2,375+ $0.0974 $231.3250
3,085+ $0.0937 $289.0645
3,855+ $0.0900 $346.9500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 47,000 pieces
MOQ: 500 pcs
Order Increment : 1 pcs
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